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K4145 2SK2596 UVTOP285 TB0316A MBRS1 1N6060E3 MP501 74LS28
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 On-Region Characteristics.
10
ID,Drain-Source Current(A)
VGS=10V 4.5V
3.0V 2.5V
RDS(ON), Normalized Drain-Source on-Resistance
On-Resistance Variation With Drain Current and Gate Voltage.
2.4 2.2 2 1.8 1.6 1.4 3.5V 1.2 1 0.8 0 2 4 6 ID,Drain Current(A) 10V 8 10 4.5V VGS=2.0V 2.5V 3.0V
8 6
2.0V 4 2 1.5V 0 0 1 2 3 4 VDS,Drain-Source Voltage(V)
RDS(ON),Normalized Drain-Source On-Resistance
1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50
On-Resistance Variation With Temperature.
ID=3A VDS=4.5V
On-Resistance Variation vs. Gate-Source Voltage.
0.20 ID=2A
0.15
RDS(ON)(OHM)
0.10 125C 25C 0.05
0
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ,Junction Temperature(C)
VGS,Gate to Source Voltage(V)
Is, Reverse Drain Current (A)
Transfer Characteristics.
10 VDS=5V 8
ID,Drain Current(A)
Body Diode Forword Voltage Variation with Source Current and Temperature.
10
VGS= 0V
TA=55C
25C 125C
1
TA= 125C 25C -55C
6 4 2 0 0
0.1
0.01
0.001
0.0001 0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
VSD, Body Diode Forward Voltage(V)
VGS,Gate To Source Voltage(V)
Gate-Charge Characteristics
5
ID = 3.5A VDS= 5V 15V
500
Capacitance Characteristics
4
10V
400
Ciss
VGS (Voltage)
2
Capacitance(pF)
3
300
200
1
100
Coss
0 0 1 2 3 4 5 6
0 0 5 10
Crss
15 20 25 30
Qg (nC)
VDS,Drain to Source Voltage(V)
Maximum Safe Operating Area.
30
Single Pulse Maximum Power Dissipation.
5
10
100 us
S (O RD T IMI N)L
4
ID, Drain Current(A)
3 1 0.3 0.1 0.03
1m s
Power(W)
30 50
10m s 100 ms 1s DC
3
VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C
0.1 0.3 1 3
2
1
VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C
0.1 1 10 100 300
0.01
10
VDS, Drain-Source Voltage(V)
0 0.01
Single pulse time(SEC)
Transient Thermal Response Curve.
r(t), Normalized Effective Transient Thermal Resistance
1 D=0.5
0.5
0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 Single Pulse
P(pk)
t1 t2
0.02
R JA(t) = r(t) * R R JA=150 C/W TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2
0.001 0.01 0.1 1 10 100 300
0.01 0.0001
t1 Time(Sec)


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